Deep levels in tungsten doped n-type 3C–SiC

Aluminum-implantation-induced deep levels in n-type 6H–SiC

Electron-irradiation-induced deep levels in n-type 6H–SiC

Toxicity of Tungsten Carbide and Cobalt-Doped Tungsten Carbide Nanoparticles in Mammalian Cells in Vitro

BACKGROUND Tungsten carbide nanoparticles are being explored for their use in the manufacture of hard metals. To develop nanoparticles for broad applications, potential risks to human health and the environment should be evaluated and taken into consideration. OBJECTIVE We aimed to assess the toxicity of well-characterized tungsten carbide (WC) and cobalt-doped tungsten carbide (WC-Co) nanopa...

Title Gallium implantation induced deep levels in n-type 6H-SIC

Emergence of deep levels in n-type ZnSe under hydrostatic pressure.

Photoluminescence is measured in n-type ZnSe doped with Ga and Cl under pressures to 100 kbar (at 7 K). For each dopant, the rate of pressure shift of the self-activated band changes at 25–30 kbar from faster than to slower than that of the band gap. The change is evidence that a previously unknown deep donorlike state emerges from the electron continuum. This state probably is related to zinc ...